Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism
Tuesday publication post! In this newest publication using the #FusionAX system, authors were using in situ electrical biasing within TEM to study electronic device formation! They visualized the formation of nanowires for field-effect transistors (FETs) in real time and at atomic resolution. The findings revealed that Mo₆Te₆ NWs form only along specific directions within the … Read More