Category: Electronic Devices

Tuesday publication update! In this newest research published in #AdvancedMaterials, researchers are looking at all-electric functional nanodevices with rapid reset and multi-state switching capabilities using our #FusionAX system! Using an in situ biasing technique, and focus-ion beam preparation (FIB) the authors look at spin configuration rearrangement by domain wall number modulation in Fe3GeTe2. ⚡In-situ Lorentz … Read More

Tuesday publication update! Have you ever wanted to look at quantum conductance effects? In these newest publication by @Gianluca Milano, @Federico Raffone, @Katarzyne Bejtka, @Ivan de Carlo, @Matteo Fretto, @Fabrizio Candido Pirri, @Giancarlo Cicero, @Carlo Ricciardi and @Ilia Valov memresitive nanowires were imaged using the #FusionAX system! ⚡In this recent study, the authors look at … Read More

Tuesday publication update! In this newest publication, the #FusionAX system was used to do electrical biasing experiments using in situ electron microscopy on next-generation resistive random-access memory (RRAM). By employing advanced electron microscopy techniques, including transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and electron energy-loss spectroscopy (EELS), the microstructural evolution of Pt/NiO/Nb2O5 x/Pt bilayer … Read More

Tuesday publication update! A new pioneering technique, known as secondary electron e-beam-induced current (SEEBIC), offers atomic-scale insights into material properties like conductivity, connectivity, and work function. However, this technique can also be used together with in situ electron microscopy. In this newest work, authors used the #FusionAX system and SEEBIC imaging on a stacked 2D … Read More

Additional Friday publication update! In this newest publication, the authors used the electrical capabilities of the #FusionAX system to look at the optoelectronic properties of fully processed red-emitting AlGaInP micro-diode devices ️The quantum wells within the diode exhibited a fascinating behavior—they rested on a potential gradient until reaching the threshold forward bias voltage for light … Read More

Another Tuesday Publication update! Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. Using the #FusionSelect, a heating study was performed on some beautiful 2D In2Se3 films. The phase-controllable synthesis strategies of large-area 2D In2Se3 films from this study can open numerous opportunities in developing novel structures and concepts for … Read More