New FIB-optimized E-chips use the same sample preparation procedures you are used to in traditional FIB preparation and produce better electrical measurements. (Left) Create thin lamellae liftouts and attach them to E-chips with ease and (middle) conduct final thinning directly on the E-chip without damaging the E-chip contacts or electrical leads. (Right) Electrical profile of a Conductive Bridge Resistive Memory (CBRAM) device tested with FIB-optimized E-chips.
Using the same steps as traditional FIB sample preparation, these E-chips enable anyone to create high-quality, thin lamellae for in situ electrical biasing experiments. Prepare samples in ½ the time by eliminating extra steps necessary for FIB preparation on normal E-chips.
Conduct 4-point probe or 2-point probe measurements on your sample using the E-chip configuration that’s right for you. Available in two unique configurations, the FIB-optimized E-chips are ideally suited for studying materials ranging from p-n junctions, CMOS devices, resistive memory devices, piezoelectrics, and much more.
Customize your experiment with either the 2-point (left) or 4-point probe (right) configurations of these new E-chips
Maximize the quality of your experiment by eliminating beam damage to your sample and the E-chip contacts. Because of the unique notched design, samples can be welded to electrical leads and thinned to electron transparency without affecting electrical contacts.
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