Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. Using the #FusionSelect, a heating study was performed on some beautiful 2D In2Se3 films. The phase-controllable synthesis strategies of large-area 2D In2Se3 films from this study can open numerous opportunities in developing novel structures and concepts for future FE electronics as well as logic-in-memory device.


#FindYourBreakthrough #Protochips #2DMaterials#InSituMicroscopy

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