Phase-controllable large-area two dimensional In2Se3 and ferroelectric heterophase junction
Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. Using the #FusionSelect, a heating study was performed on some beautiful 2D In2Se3 films. The phase-controllable synthesis strategies of large-area 2D In2Se3 films from this study can open numerous opportunities in developing novel structures and concepts for future FE electronics … Read More