In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Fusion AX Publication Alert in Advanced Functional Materials on Electronic Devices

Tuesday publication post! 📖 In this newest study, a lamella memristive device fabricated via focused ion beam (FIB) from a metal/TiOx/TiN/Si structure is explored to uncover nanoscale switching mechanisms in resistive switching (RS) systems. Using advanced in situ microscopy and electrical characterization with the Fusion AX system, the authors reveal how ultra-low-voltage switching can be achieved with high repeatability.

Key highlights:
⚡ The device exhibits volatile resistive switching with an ultra-low threshold of ≈ ±0.4 V, enabling low-power operation
🔬 In situ TEM and STEM-EELS directly visualize oxygen vacancy migration under applied bias, linking ionic motion to electrical behavior
🔄 Switching is governed by modulation of Schottky barriers at metal/semiconductor interfaces, driven by vacancy redistribution

This work provides fundamental insight into interface-driven RS mechanisms and highlights how nanoscale characterization can guide the design of next-generation ultra-low-energy memristive devices for data storage and neuromorphic computing.

In the video you can see how AXON Synchronicity is keeping up with the focus by plotting the focus score! Using our focus assist options, the software is able to automatically keep the sample in the right focus, without the operator having to touch the microscope!

Want to read the entire work?
Find it here!
https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202517173

Want to know more about our Fusion system?
https://www.protochips.com/solutions/in-situ-tem-solutions/in-situ-heating-and-electrical/

2025 09 02 Fusion 2
2025 09 02 Fusion 2

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