Tuesday publication post! In this publication from the #TUBerlin and #HumboldtUniversityBerlin the authors have used a unique method for ultrafast time-resolved electron holography on electronic devices! Using iGate, authors Tolga Wagner, Husayin Celik, Michael Lehmann, Dirk Berger and Ines Häusler captured the switching behavior of two silicon diodes (unbiased to reverse-biased) with unprecedented 25 ns temporal resolution at a 3 MHz repetition rate. The #FusionAX FIB optimized E-chips were used for TEM lamella preparation.
For an ultrafast UG1A rectifier diode, the decreasing capacitance with increasing reverse bias matched both macroscopic electrical characterization and theoretical predictions.
⚡ A modified 1N4007 diode, however, exhibited unexpected MOSCAP-like behavior, with rising capacitance in the space-charge region during reverse bias switching.
Remarkably, even the vacuum region outside the devices revealed distinct behaviors driven by the effective capacitance of the electrical setup. This underscores the unique advantages of localized dynamic potentiometry enabled by iGate.
These findings highlight how iGate transforms ultrafast TEM imaging by providing localized, dynamic insights into electric potential changes, opening doors to more precise device diagnostics and design optimization.
Want to read the entire research?
Find it here!
https://www.doi.org/10.1103/PhysRevB.109.085310
#InSituMicroscopy #Protochips #FindYourBreakthrough
