Publication Alert! 📖 In this new publication, researchers used the #FusionAX system to investigate the structural evolution of Bi₂O₂Se/Bi₂O₅Se resistive random-access memory (RRAM) devices during operation, providing new insights into the mechanisms that enable reliable nonvolatile memory and neuromorphic computing.
Bi₂O₂Se is an exciting material for next-generation electronics due to its high carrier mobility, excellent air stability, and ability to naturally form the high-κ insulating oxide Bi₂O₅Se. Understanding how these materials evolve under electrical bias is essential for designing faster, more reliable memory devices.
Key findings:
⚡ Directly observed electric-field-driven oxidation of Bi₂O₂Se into Bi₂O₅Se during resistive switching using in situ TEM. 🔬 Combined high-resolution in situ TEM with aberration-corrected STEM to identify a previously unreported oxygen-deficient phase formed during device operation. 📊 Established the structural basis for the exceptional device performance, including 3 × 10⁶ switching cycles, retention exceeding 10⁴ seconds, and stable multilevel resistance states. 🧠 Provided new insights into the resistance-switching mechanism that supports both high-performance RRAM and neuromorphic computing applications.
This research gives valuable insights into the development of next-generation electronic materials and devices.
Want to read the full publication? Find it here!
https://www.doi.org/10.1002/advs.75508
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