Protochips has developed the innovative and patented AduroTM System based upon semiconductor devices and materials, integrating capabilities such as temperature control and electrical stimulus directly onto the specimen support. The AduroTM System enables in situ analysis using an electron microscope, while making it easy to use, versatile, stable, fast and at the highest resolution possible. Because semiconductor processing is at the core of the technology, the AduroTM System is compatible with new and existing equipment. The technology is based upon a family of robust, consumable semiconductor specimen support devices. Unlike traditional heating stages that use large heating elements millimeters away from the specimen, the AduroTM specimen supports generate heat using a low-stress semiconductor membrane directly beneath the sample. This allows for extremely accurate and well-controlled sample temperatures with virtually no drift. The low thermal mass of the ceramic membrane allows rapid changes to the specimen temperature while imaging. Extremely fast response times are possible - up to 1E6 ˚C per second and to temperatures exceeding 1200˚C. Because heat is well-localized to the ceramic membrane and CTEs are low and closely matched, drift is minimal and typically settles within seconds.

• APP_AppOfApps-mm09 - The AduroTM System enables entirely new capabilities and applications inside the EM. Read this application note to learn more and to think of ways you can expand your work with Aduro.
• APP_SEM-zirconia X-ray-mm09 - This application notes demonstrates how heat can be started and stopped virtually instantaneously to allow quantitative X-ray analysis directly within the SEM.
• APP_SEM-zirconia-mm09 - This application note demonstrates real-time imaging in secondary electron mode at 750˚C of a hollow tube composed of the three ALD layers.
• APP_TEM-Pt-mm09 - This application note demonstrates for the first time atomic resolution of a nanoparticle catalyst at 1000 ˚C.
• APP_TEM-ZnO-mm09 - This application note demonstrates TEM imaging of void formation in a ZnO sample at 710˚C